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ОБЩЕСТВО С ОГРАНИЧЕННОЙ ОТВЕТСТВЕННОСТЬЮ "ЦЕНТР НАЦИОНАЛЬНЫХ ИНТЕЛЛЕКТУАЛЬНЫХ СИСТЕМ" ИНН: 9704271170
описание
ID: 19128
Synopsys provides silicon design, IP, simulation and analysis solutions, and design services. It partners with customers across a wide range of industries to strengthen their R&D capabilities and productivity and enable innovation in AI-powered products.
задачи
Lead a team of SRAM memory layout engineers through the full development cycle, from initial floorplanning and resource allocation to physical verification signoff and product release
Own layout execution for memory arrays, bitcells, peripheral circuits, power distribution networks, and complete memory instances, ensuring they meet PPA, reliability, and manufacturability targets
Resolve complex physical design challenges, including DRC, LVS, ERC, antenna violations, EM/IR analysis, routing congestion, and parasitic extraction issues across advanced FinFET and GAA nodes
Manage project schedules, resource allocation, technical dependencies, and risk mitigation across concurrent memory compiler and embedded memory development efforts
Collaborate with circuit design, memory architecture, characterization, CAD tool development, physical verification, process technology, and foundry engineering teams to align layout execution with product requirements
Build and improve layout methodologies, automation scripts, design reuse frameworks, and standardization practices to increase team efficiency and reduce development cycle time
Mentor engineers, establish technical best practices, conduct performance reviews, support hiring and onboarding, and grow the technical capability of the layout organization
Deliver embedded SRAM memories and memory compiler products that meet PPA targets and enable customer tapeouts on schedule
Reduce layout development cycle time and improve design quality through methodology improvements, automation, and reuse strategies across projects
Build a high-performing layout team with strong technical depth, clear career growth paths, and the ability to handle increasing complexity at advanced nodes
Resolve critical physical design issues that unblock product releases and prevent costly respins or yield losses
Strengthen collaboration between layout, circuit design, and verification teams to reduce miscommunication and rework
Establish layout best practices and design standards that improve consistency, quality, and knowledge transfer across the memory IP organization
Enable memory IP customers to achieve their performance, power, area, and time-to-market goals by delivering robust, manufacturable memory solutions
требования
Bachelor's or master's degree in electrical engineering, Electronics, Microelectronics, or a related field
7+ Years of hands-on experience in SRAM memory layout development, including bitcells, arrays, peripheral circuits, and full memory integration
Deep understanding of SRAM architecture, memory compilers, and how layout decisions affect performance, power, area, yield, and reliability
Strong working knowledge of DRC, LVS, ERC, antenna checks, EM/IR analysis, parasitic extraction, and advanced-node layout constraints
Experience leading engineering teams or managing complex technical projects with multiple stakeholders and dependencies
Будет плюсом: Proficiency with industry-standard custom layout tools and physical verification flows, experience with layout automation and scripting, SRAM memory compiler development across multiple process technologies, advanced FinFET or GAA nodes
условия
Comprehensive health, wellness, and financial benefits